s m d ty p e w w w . k e x i n . c o m . c n 1 d i o d e s f e a tu r e s s w i t c h i n g t i m e : t y p . 0 . 8 u s c o n t i n u o u s r e v e r s e v o l t a g e : 7 5 v ( m a x ) r e p e t i t i v e p e a k r e v e r s e v o l t a g e : 8 5 v ( m a x ) r e p e t i t i v e p e a k f o r w a r d c u r r e n t : 5 0 0 m a ( m a x ) 1.anode 2.anode 3.cathode 2 1 3 a b s o l u te m a x i m u m ra ti n g s t a = 2 5 p a r a m e t e r s y m b o l r a t i n g u n i t r e p e t i t i v e p e a k r e v e r s e v o l t a g e v r m 8 5 c o n t i n u o u s r e v e r s e v o l t a g e v r 7 5 f o r w a r d c u r r e n t - s i n g l e d i o d e l o a d e d ; 2 1 5 - d o u b l e d i o d e l o a d e d ; 1 2 5 p e a k f o r w a r d s u r g e c u r r e n t i f m 5 0 0 n o n - r e p e t i t i v e p e a k f o r w a r d c u r r e n t t p = 1 u s 4 t p = 1 m s 1 t p = 1 s 0 . 5 p o w e r d i s s i p a t i o n p d 2 5 0 m w t h e r m a l r e s i s t a n c e f r o m j u n c t i o n t o a m b i e n t r t h j - a 5 0 0 t h e r m a l r e s i s t a n c e f r o m j u n c t i o n t o t i e - p o i n t r t h j - t p 3 6 0 j u n c t i o n t e m p e r a t u r e t j 1 5 0 s t o r a g e t e m p e r a t u r e r a n g e t st g - 6 5 t o 1 5 0 m a v i f i f s m a / w e l e c tr i c a l ch a r a c te r i s ti c s t a = 2 5 p a r a m e t e r s y m b o l t e s t c o n d i t i o n s m i n t y p m a x u n i t r e v e r s e b r e a k d o w n v o l t a g e v r i r = 1 0 0 u a 7 5 v f 1 i f = 1 m a 0 . 9 v f 2 i f = 1 0 m a 1 v f 3 i f = 5 0 m a 1 . 1 v f 4 i f = 1 5 0 m a 1 . 2 5 v r = 7 5 v 5 v r = 7 5 v , t j = 1 5 0 8 0 d i o d e c a p a c i t a n c e c d v r = 0 v , f = 1 m h z 2 p f r e v e r s e r e c o v e r y t i m e t r r i f = i r = 1 0 m a , i r r = 0 . 1 x i r , r l = 1 0 0 3 u s f o r w a r d v o l t a g e v r e v e r s e v o l t a g e l e a k a g e c u r r e n t i r 1 n a m a r k i n g m a r k i n g j x * s w it ch in g dio d es ba v 170 ( k a v 1 7 0 ) 0.4 +0.1 -0.1 2.9 +0.2 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.2 2.8 +0.2 -0.1 +0.2 -0.1 1 2 3 unit: mm sot-23-3 1 . 6 0.4 0.15 +0.02 -0.02 0.55 0-0.1 0.68 +0.1 -0.1 1.1 +0.2 -0.1
s m d ty p e w w w . k exi n . co m . c n 2 dio d e s t y p i c a l ch a r a c te r i s i ti c s device mounted on a fr4 printed-circuit board. (1) single diode loaded. (2) double diode loaded. fig.2 maximum permissible conti n uous forward current as a function of ambient temperature. handbook, halfpage 0 0 1 0 i f (ma) 200 300 0 100 200 t amb ( o c) (1) (2) fig.3 forward current as a function of forward voltage; per diode. 6 . 1 0 300 0 100 200 0.8 1.2 0.4 i f (ma) v (v) f (1) (2) (3) (1) t j = 150 c; typical v alue s . (2) t j = 25 c; typical v alue s . (3) t j = 25 c; maxim um v alue s . fig.4 maximum permissible non-repetitive peak forward current as a function of pulse duration per diode. based on square wave currents; t j = 25 c prior to surge. 10 t p (s) 1 i fsm (a) 10 2 10 ?1 10 4 10 2 10 3 10 1 s w it ch in g dio d es ba v 170 ( k a v 1 7 0 )
s m d ty p e w w w . k e x i n . c o m . c n 3 dio d e s t y p i c a l ch a r a c te r i s i ti c s v r = 75 v. (1) maximum values. (2) typical values. fig.5 reverse current as a function of junction temperature; per diode. 10 2 10 3 150 200 50 0 100 10 1 10 1 10 2 i r (na) t ( c) o j (1) (2) fig.6 diode capacitanc e as a function of reverse voltage; per diode; typical values. f = 1 mhz; t j = 25 c. 0 2 0 1 0 15 5 2 0 1 v r (v) c d (pf) s w it ch in g dio d es ba v 170 ( k a v 1 7 0 )
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